DYNAMIC BEHAVIOR IMPROVEMENT OF NORMALLY-OFF P-GAN HIGH-ELECTRON-MOBILITY TRANSISTOR THROUGH A LOW-TEMPERATURE MICROWAVE ANNEALING PROCESS

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of Cream the high-frequency switching efficiency.In this study, better current density and reliable dynamic behaviors of

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